MTB013N10RJ3-0-T3-G datasheet(3/9 Pages) CYSTEKEC

部品番号	MTB013N10RJ3-0-T3-G

部品情報	N-Channel Enhancement Mode Power MOSFET

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メーカー	CYSTEKEC [Cystech Electonics Corp.]

ホームページ	http://www.cystekec.com

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3 / 9 page

CYStech Electronics Corp.

Spec. No. : C056J3

Issued Date : 2016.11.02

Revised Date :

Page No. : 3/ 9

MTB013N10RJ3

CYStek Product Specification

Characteristics (Tj=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

100

-

V

VGS=0V, ID=250μA

∆BVDSS/∆Tj

-

70

-

mV/

°C

Reference to 25

°C, ID=250μA

VGS(th)

1

-

2.5

V

VDS = VGS, ID=250μA

*GFS

-

23.5

-

S

VDS =10V, ID=10A

IGSS

-

±

100

nA

VGS=±20V

-

1

VDS =80V, VGS =0V

IDSS

-

5

μA

VDS =80V, VGS =0V, Tj=55

°C

-

12.5

16

VGS =10V, ID=15A

*RDS(ON)

-

14.5

20

mΩ

VGS =4.5V, ID=10A

Dynamic

*Qg

-

55

-

*Qgs

-

9.1

-

*Qgd

-

9.9

-

nC

VDD=80V, ID=15A,VGS=10V

*td(ON)

-

18.2

-

*tr

-

17.2

-

*td(OFF)

-

60

-

*tf

-

8

-

ns

VDD=50V, ID=15A, VGS=10V, RG=1Ω

Ciss

-

3050

-

Coss

-

185

-

Crss

-

14

-

pF

VGS=0V, VDS=50V, f=1MHz

Source-Drain Diode

*IS

-

42

*ISM

-

168

A

*VSD

-

0.82

1.2

V

IS=15A, VGS=0V

*trr

-

33

-

ns

*Qrr

-

48

-

nC

VGS=0V, IF=15A, dIF/dt=100A/μs

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

同様の部品番号 - MTB013N10RJ3-0-T3-G

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Cystech Electonics Corp...	MTB013N10RE3	403Kb / 8P	N-Channel Enhancement Mode Power MOSFET
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