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NE02133-T1B データシート(PDF) 2 Page - List of Unclassifed Manufacturers

部品番号 NE02133-T1B
部品情報  NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
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PART NUMBER
NE02133
NE02135
NE02139
EIAJ1 REGISTERED NUMBER
2SC2351
2SC2149
2SC4092
PACKAGE OUTLINE
33
35
39
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX
MIN
TYP MAX
MIN
TYP MAX
fT
Gain Bandwidth Product at VCE = 10 V,
IC = 20 mA
GHz
4.5
4.5
4.5
|S21E|2
Insertion Power Gain at
VCE = 10 V, IC = 20 mA,
f = 0.5 GHz
dB
15
18.5
f = 1 GHz
dB
9
10
13
9
10
f = 2 GHz
dB
4
5
5
5.7
NFMIN
Minimum Noise Figure6 at
VCE = 10 V, IC = 3 mA,
f = 0.5 GHz
dB
1.5
VCE = 10 V, IC = 5 mA,
1.5
f = 1 GHz
dB
1.5
3
f = 2 GHz
dB
2.7
4.0
ICBO
Collector Cutoff Current at VCB = 15 V,
IE = 0
µA
1.0
1.0
1.0
IEBO
Emitter Cutoff Current at VEB = 2 V,
IC = 0
µA
1.0
1.0
1.0
hFE
Forward Current Gain at
VCE = 10 V, IC = 20 mA
40
70
200
20
70
250
40
70
200
CCB
Collector to Base Capacitance4 at
VCB = 10 V, IE = 0 , f = 1 MHz
pF
0.75
1.0
0.6
1.0
.75
RTH (J-C)
Thermal Resistance (Junction to Case)
°C/W
120
RTH (J-A)
Thermal Resistance (Junction to Ambient)
°C/W
666
600
500
PT5
Total Power Dissipation
mW
150
290
500
200
fT
Gain Bandwidth Product at VCE = 10 V, IC = 20 mA
GHz
4.5
4.5
|S21|2
Insertion Power Gain at VCE = 10 V, IC = 20 mA,
f = 0.5 GHz
dB
18.5
18.5
f = 1 GHz
dB
13
13
f = 2 GHz
dB
5.5
6.5
5.5
6.5
NFMIN
Minimum Noise Figure2 at
VCE = 10 V, IC = 3 mA, f = 0.5 GHz
dB
1.5
1.5
VCE = 10 V, IC = 5 mA, f = 2 GHz
dB
2.7
4.5
2.7
4.5
ICBO
Collector Cutoff Current at VCB = 15 V, IE = 0
µA
1.0
1.0
IEBO
Emitter Cutoff Current at VEB = 2 V, IC = 0
µA
1.0
1.0
hFE
Forward Current Gain at VCE = 10 V, IC = 20 mA
20
70
250
20
70
250
CCB
Collector to Base Capacitance4 at VCB = 10 V, IE = 0, f = 1 MHz
pF
0.6
1.0
0.6
1.0
RTH (J-C)
Thermal Resistance (Junction to Case)
°C/W
70
90
RTH (J-A)
Thermal Resistance (Junction to Ambient)
°C/W
500
PT5
Total Power Dissipation
mW
580
700
350
700
NE021 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Input and output are tuned for optimum noise figures.
3. Common base electrical charactristics see S-Parameters.
4. CCB measurement employs a three-terminal capacitance bridge
5. Minimum dissipations based on RTH (J-A) for applications without effective
incorporating a guard circuit. The emitter terminal shall be
heat sink, maximum dissipations based on RTH (J-C) for applications with
connected to the guard terminal.
effective heat sink.
6. Output and Input are tuned for minimum noise figure.
PART NUMBER
NE02100
NE02107
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
00 (CHIP)
07/07B3
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
MIN
TYP
MAX


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