10

ADDR1333C4G9

DDR3-1333(CL9) 240-Pin R-DIMM

4GB(512M x 72-bits)

 

Absolute Maximum Ratings：

Parameter

Symbol

Value

Unit

Voltage on VDD supply relative to Vss

VDD

-0.4 ~ 1.975

V

Voltage on VDDQ pin relative to Vss

VDDQ

-0.4 ~1.975

V

Voltage on any pin relative to Vss

VIN, Vout

-0.4 ~ 1.975

V

Storage temperature

TStg

-55 ~ +100

℃

Note:

DDR3 SDRAM component specification.

Operation Temperature Condition

Parameter

Symbol

Value

Unit

Note

Normal Operating Temperature Range

TC

0~+85

℃

1

Extended Temperature Range (Optional)

TC

+85~+95

℃

1

Note:

(1) If the DRAM case temperature is above 85

℃, the Auto-Refresh command interval has to be reduced to tREFI=3.9us.

DC Operating Condition

：

Voltage referenced to Vss = 0V, VDD&VDDQ=1.5V±0.075V, Tc = 0 to 85

℃

Parameter

Symbol

Min

Max

Unit

Note

Supply Voltage

VDD

1.283

1.45

V

1,2

VDDSPD

3

3.6

V

Supply Voltage for Output

VDDQ

1.283

1.45

V

1,2

I/O Reference Voltage(CMD/ADD)

VREFCA, (DC)

0.49 x VDDQ

0.51 x VDDQ

V

3,4

I/O Reference Voltage(DQ)

VREFDQ, (DC)

0.49 x VDDQ

0.51 x VDDQ

V

3,4

Termination Voltage

VTT

0.49 x VDDQ-20mV

0.51 x VDDQ+20mV

V

Note:

(1) Under all conditions VDDQ must be less than or equal to VDD.

(2) VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

(3) The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ±1% VDD

(for reference: approx. ±15mV)

(4) For reference: approx. VDD/2 ±15mV