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TC1221ECH データシート(PDF) 6 Page - Microchip Technology |
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TC1221ECH データシート(HTML) 6 Page - Microchip Technology |
6 / 16 page TC1221/TC1222 DS20001367C-page 6 2002-2014 Microchip Technology Inc. Table 4-1 shows various values of C1 and the corresponding output resistance values @ +25°C. It assumes a 0.1 ESR C1 and 2 RSWITCH. Table 4-2 shows the output voltage ripple for various values of C2. The VRIPPLE values assume 10mA output load current and 0.1 ESR C2. TABLE 4-1: OUTPUT RESISTANCE VS. C1 (ESR = 0.1 ) TABLE 4-2: OUTPUT VOLTAGE RIPPLE VS. C2 (ESR = 0.1 ) IOUT 10mA 4.4 Input Supply Bypassing The VIN input should be capacitively bypassed to reduce AC impedance and minimize noise effects due to the internal switching of the device. The recom- mended capacitor depends on the configuration of the TC1221/TC1222. 4.5 Shutdown Input The TC1221/TC1222 is enabled when SHDN is high, and disabled when SHDN is low. This input cannot be allowed to float. The SHDN input should be limited to 0.5V above VIN to avoid significant current flows. 4.6 Voltage Inverter The most common application for charge pump devices is the inverter (Figure 4-3). This application uses two external capacitors: C1 and C2 (plus a power supply bypass capacitor, if necessary). The output is equal to -VIN plus any voltage drops due to loading. Refer to Table 4-1 and Table 4-2 for capacitor selection. FIGURE 4-3: VOLTAGE INVERTER TEST CIRCUIT C1 ( F) TC1221 ROUT() TC1222 ROUT() 0.22 52.9 22.6 0.33 40.8 20.5 0.47 33.5 19.4 1.0 25 17.8 C2 ( F) TC1221 VRIPPLE (mV) TC1222 VRIPPLE (mV) 0.22 184 32 0.33 123 22 0.47 87 16 1.0 42 9 3 2 4 5 1 C3 C1 C2 VIN VOUT RL TC1221 TC1220 C1– IN OUT C1+ GND Device C1 C2 C3 TC1221 1 μF 1 μF 1 μF TC1222 0.22 μF 0.22 μF 0.22 μF SHDN 6 + + + |
同様の部品番号 - TC1221ECH |
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同様の説明 - TC1221ECH |
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