FDC6000NZ datasheet(2/7 Pages) FAIRCHILD

部品番号	FDC6000NZ

部品情報	Dual N-Channel 2.5V Specified PowerTrench MOSFET

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FDC6000NZ RevE1 (W)

Electrical Characteristics

T

A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ Max Units

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250 µA

20

V

∆BVDSS

∆TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

14

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 16 V,

VGS = 0 V

1

µA

IGSS

Gate–Body Leakage

VGS = ±12 V,

VDS = 0 V

± 10

µA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250 µA

0.6

0.9

1.5

V

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coefficient

ID = 250 µA, Referenced to 25°C

–4

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 4.5 V,

ID = 6.5 A

VGS = 4.0 V,

ID = 6.4 A

VGS = 3.1 V,

ID = 6.3 A

VGS = 2.5 V,

ID = 5.5 A

VGS = 4.5 V, ID = 6.5A, TJ=125°C

16.5

16.8

19.2

22.5

22.8

20

21

24

28

30

m

Ω

gFS

Forward Transconductance

VDS = 5 V,

ID = 6.5 A

30

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 10 V,

V GS = 0 V,

f = 1.0 MHz

840

pF

Coss

Output Capacitance

210

pF

Crss

Reverse Transfer Capacitance

100

pF

RG

Gate Resistance

VGS = 15 mV,

f = 1.0 MHz

2.3

Ω

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

VDD = 10 V,

ID = 1 A,

VGS = 4.5 V,

RGEN = 6 Ω

10

20

ns

tr

Turn–On Rise Time

15

27

ns

td(off)

Turn–Off Delay Time

18

32

ns

tf

Turn–Off Fall Time

9

18

ns

Qg

Total Gate Charge

VDS = 10 V,

ID = 6.5 A,

VGS = 4.5 V

8

11

nC

Qgs

Gate–Source Charge

1.5

nC

Qgd

Gate–Drain Charge

2.1

nC

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

1.25

A

VSD

Drain–Source Diode Forward Voltage VGS = 0 V,

IS = 1.25A

(Note 2)

0.7

1.2

V

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