 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
FDZ209N データシート(PDF) 4 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
FDZ209N データシート(HTML) 4 Page - Fairchild Semiconductor |
|
|
4 / 6 page  FDZ209N Rev B2 (W) Typical Characteristics 0 5 10 15 20 0 1 2 3 4 5 6 7 VDS, DRAIN-SOURCE VOLTAGE (V) 4.3V 4.8V 4.5V 4.0V VGS = 5.0V 3.8V 0.8 1 1.2 1.4 1.6 1.8 0 5 10 15 20 ID, DRAIN CURRENT (A) VGS = 4.0V 4.8V 5.0V 4.5V 4.3V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 4A VGS = 5.0V 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) ID =2A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 5 10 15 20 2 2.5 3 3.5 4 4.5 5 5.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25oC 125oC VDS = 5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25oC -55oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
同様の部品番号 - FDZ209N |
|
同様の説明 - FDZ209N |
|
|
|
リンク URL |
| プライバシーポリシー |
| ALLDATASHEET.JP |
| ALLDATASHEETはお客様のビジネスに役立ちますか？ [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Japanese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
