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IDT7015S データシート(PDF) 8 Page - Integrated Device Technology |
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IDT7015S データシート(HTML) 8 Page - Integrated Device Technology |
8 / 21 page 6.42 IDT7015S/L High-Speed 8K x 9 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 8 Waveform of Read Cycles(5) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first, CE or OE. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD. 5. SEM = VIH. Timing of Power-Up / Power-Down tRC R/ W CE ADDR tAA OE 2954 drw 07 (4) tACE (4) tAOE (4) (1) tLZ tOH (2) tHZ (3,4) tBDD DATAOUT BUSYOUT VALID DATA (4) CE 2954 drw 08 tPU ICC ISB tPD 50% 50% , |
同様の部品番号 - IDT7015S_16 |
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同様の説明 - IDT7015S_16 |
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