IRLU3715 datasheet(1/10 Pages) IRF

部品番号	IRLU3715

部品情報	SMPS MOSFET

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メーカー	IRF [International Rectifier]

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Symbol

Parameter

Max.

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-to-Source Voltage

± 20

V

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

54

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

38

A

IDM

Pulsed Drain Current

210

PD @TC = 25°C

Maximum Power Dissipation

71

W

PD @TA = 25°C

Maximum Power Dissipation

3.8

W

Linear Derating Factor

0.48

W/°C

TJ , TSTG

Junction and Storage Temperature Range

-55 to + 175

°C

www.irf.com

1

06/28/01

IRLR3715

IRLU3715

SMPS MOSFET

HEXFET® Power MOSFET

Notes

through are on page 10

Absolute Maximum Ratings

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

2.1

RθJA

Junction-to-Ambient

–––

110

°C/W

RθJA

Junction-to-Ambient (PCB mount)

–––

50

Applications

Benefits

l Ultra-Low Gate Impedance

l Very Low RDS(on) at 4.5V VGS

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

VDSS

RDS(on) max

ID

20V

14m

Ω

54A

D-Pak

I-Pak

IRLR3715

IRLU3715

PD - 94177

同様の部品番号 - IRLU3715

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Inchange Semiconductor ...	IRLU3715Z	247Kb / 2P	isc N-Channel MOSFET Transistor
International Rectifier	IRLU3715ZCPBF	293Kb / 11P	HEXFET Power MOSFET

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