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WSAD92-02N データシート(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WSAD92-02N データシート(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
1 / 6 page Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WSAD92-02N Product Description WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WT-D005-Rev.A0 Mar.2014 0314 20A,200V 20A,200V 20A,200V 20A,200V Ultrafast Ultrafast Ultrafast Ultrafast Dual Dual Dual Dual Diode Diode Diode Diode Features � Ultrafast recovery time � Low forward voltage drop � Low leakage current � High reliability by planer design � Maximum Junction Temperature Range(175℃) General Description Winsemi's WSAD92-02N is the state of the are Ultra fast Recovery rectifiers designed with optimized performance of forward voltage drop and ultra fast recovery time .The planar structure and the platinum doped life time,control guarantee the best overall performance,ruggedness and reliability characteristics. Applications � Switching power Supplies � Uninterruptable Power Supplies � Power Switching circuits � General Purpose Absolute Maximum Ratings Symbol Parameter Value Units VRRM Peak Repetitive Reverse voltage 200 V IF(AV) Average Out Current Square wave,duty=1/2,Tc=115℃ 20 A IFSM Repetitive Peak Surge Current 100 A TSTG,TJ Operating Junction Temperature & Storage Temperature -55-~175 ℃ Electeical Characteristics (Tc=25℃ unless otherwise noted) Symbol Parameter Test Conditions Value Units Min Typ Max VF Forward Voltage Dorp IF=20A - - 1.15 V IF=10A,Tc=125℃ - - 0.8 V IRRM Reverse Current VR=200V - 5 15 µA VR=200V,Tc=150℃ - - 4 mA trr Reverse Recovery Time IF=20A,dlF/dt=100µs - - 30 ns Rth(J-C) Thermal Resistance - - 1.5 ℃/W A A A A2 2 2 2 A1 A1 A1 A1 C C C C |
同様の部品番号 - WSAD92-02N |
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同様の説明 - WSAD92-02N |
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