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WSAD92-02N データシート(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

部品番号 WSAD92-02N
部品情報  Ultrafast Dual Diode
Download  6 Pages
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メーカー  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
ホームページ  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WSAD92-02N データシート(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WSAD92-02N Product Description
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WT-D005-Rev.A0 Mar.2014
0314
20A,200V
20A,200V
20A,200V
20A,200V Ultrafast
Ultrafast
Ultrafast
Ultrafast Dual
Dual
Dual
Dual Diode
Diode
Diode
Diode
Features
Ultrafast recovery time
Low forward voltage drop
Low leakage current
High reliability by planer design
Maximum Junction Temperature Range(175℃)
General Description
Winsemi's WSAD92-02N is the state of the are Ultra fast Recovery
rectifiers designed with optimized performance of forward voltage drop
and ultra fast recovery time .The planar structure and the platinum
doped
life
time,control
guarantee
the
best
overall
performance,ruggedness and reliability characteristics.
Applications
Switching power Supplies
Uninterruptable Power Supplies
Power Switching circuits
General Purpose
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VRRM
Peak Repetitive Reverse voltage
200
V
IF(AV)
Average Out Current Square wave,duty=1/2,Tc=115℃
20
A
IFSM
Repetitive Peak Surge Current
100
A
TSTG,TJ
Operating Junction Temperature & Storage Temperature
-55-~175
Electeical Characteristics (Tc=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Value
Units
Min
Typ
Max
VF
Forward Voltage Dorp
IF=20A
-
-
1.15
V
IF=10A,Tc=125℃
-
-
0.8
V
IRRM
Reverse Current
VR=200V
-
5
15
µA
VR=200V,Tc=150℃
-
-
4
mA
trr
Reverse Recovery Time
IF=20A,dlF/dt=100µs
-
-
30
ns
Rth(J-C)
Thermal Resistance
-
-
1.5
℃/W
A
A
A
A2
2
2
2
A1
A1
A1
A1
C
C
C
C


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