WSAD92-02N datasheet(3/6 Pages) WINSEMI

部品番号	WSAD92-02N

部品情報	Ultrafast Dual Diode

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WSAD92-02N Product Description

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

20A,200V

20A,200V Ultrafast

Ultrafast

Ultrafast Dual

Dual

Dual Diode

Diode

(1) Formula used:Tc=TJ-(Pd+PdREV)×Rthjc;

Pd=Forward Power Loss=IF(AV)×VFM@(IF(AV)/D） (see Fig.3)

PdREV=Inverse Power Loss=VR1×IR(1-D); IR@VR1=rated VR

D C

Square wave (D=0.50)

Rated Vr appllied

see note(1)

0

3

6

9

1 2

1 5

1 3 0

1 4 0

1 5 0

1 6 0

1 7 0

1 8 0

Average Forward Current-I

(A )

F (AV )

1

3

5

1 0

3 0

1 0

3 0

5 0

1 0 0

3 0 0

time(at 50H z)

Fig.5 Case Temperature vs Out Current

Fig.6 Surge Capability

T =25°C

J

1

1 0

1 0 0

1 0 0 0

1 0

1 0 0

1 0 0 0

R e ve rse Vo lta g e -V (V)

R

Fig.7 Junction Capacitance Characteristics

同様の部品番号 - WSAD92-02N

メーカー	部品番号	データシート	部品情報
Shenzhen Winsemi Microe...	WSAD92-02	327Kb / 5P	20A,200V Ultrafast Dual Diode
	WSAD92-02	263Kb / 6P	Ultrafast Dual Diode
	WSAD92-02	263Kb / 6P	Ultrafast Dual Diode

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同様の説明 - WSAD92-02N

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