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MB85R4M2TFN-G データシート(PDF) 4 Page - Fujitsu Component Limited. |
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MB85R4M2TFN-G データシート(HTML) 4 Page - Fujitsu Component Limited. |
4 / 23 page 4 DS501-00024-4v0-E MB85R4M2T BLOCK DIAGRAM FUNCTIONAL TRUTH TABLE Operation Mode /CE /WE /OE A0 to A17 /ZZ Sleep × × × × L Standby H × × × H Read ↓ H L H or L H Address Access Read L H L ↑ or ↓ H Write(/CE Control)*1 ↓ L × H or L H Write(/WE Control)*1*2 L ↓ × H or L H Address Access Write*1*3 L ↓ × ↑ or ↓ H Pre-charge ↑ × × × H Note: H= “H” level, L= “L” level, ↑= Rising edge, ↓= Falling edge, ×= H, L, ↓ or ↑ *1: In writing cycle, input data is latched at early rising edge of /CE or /WE. *2: In writing sequence of /WE control, there exists time with data output of reading cycle at the falling edge of /CE. *3: In writing sequence of Address Access Write, there exists time with data output of reading cycle at the address transition. FRAM Array 262,144×16 Column Decoder / Sense Amp. / Write Amp. A0 to A17 /CE /WE /OE /LB /UB /ZZ Address I/O0 to I/O15 |
同様の部品番号 - MB85R4M2TFN-G |
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同様の説明 - MB85R4M2TFN-G |
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