データシートサーチシステム |
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MB85RC16VPNF-G データシート(PDF) 16 Page - Fujitsu Component Limited. |
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MB85RC16VPNF-G データシート(HTML) 16 Page - Fujitsu Component Limited. |
16 / 29 page MB85RC16V 16 DS501-00010-6v0-E ■ ESD AND LATCH-UP • Current method of Latch-Up Resistance Test Note : The voltage VIN is increased gradually and the current IIN of 300 mA at maximum shall flow. Confirm the latch up does not occur under IIN = ± 300 mA. In case the specific requirement is specified for I/O and IIN cannot be 300 mA, the voltage shall be increased to the level that meets the specific requirement. Test DUT Value ESD HBM (Human Body Model) JESD22-A114 compliant MB85RC16VPNF-G-JNE1 ≥ |2000 V| ESD MM (Machine Model) JESD22-A115 compliant ≥ |200 V| ESD CDM (Charged Device Model) JESD22-C101 compliant ≥ |1000 V| Latch-Up (I-test) JESD78 compliant ⎯ Latch-Up (Vsupply overvoltage test) JESD78 compliant ⎯ Latch-Up (Current Method) Proprietary method ≥ |300 mA| Latch-Up (C-V Method) Proprietary method ⎯ A VDD VSS DUT V IIN VIN + - Test terminal Protection Resistor VDD (Max.Rating) Reference terminal |
同様の部品番号 - MB85RC16VPNF-G |
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同様の説明 - MB85RC16VPNF-G |
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