データシートサーチシステム |
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DAN222 データシート(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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DAN222 データシート(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Surface Mount Fast Switching Diode DAN222 H003 www.gmicroelec.com Rev.A 1 FEATURES Ultra-Small surface mount package. Fast switching speed. For general purpose switching applications. Low conductance. APPLICATIONS General purpose switching application. SOT-523 ORDERING INFORMATION Type No. Marking Package Code DAN222 N SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VR DC reverse voltage 80 V VRM Peak reverse voltage 80 V IF Forward continuous voltage 100 mA IFM Peak forward current (max.) 300 mA IFSM Non-repetitive peak forward surge current @t=1.0μs 2.0 A Pd Power dissipation 150 mW RθJA Thermal resistance junction to ambient 833 ℃ /W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR=100μA 80 V Leakage current IR VR=70V 0.1 μA Forward voltage VF IF=100mA 1.2 V Diode capacitance CD VR=6.0V,f=1MHz 3.5 pF Reverse recovery Time trr IF=IR=5.0mA,Irr=0.1*IR,RL=100Ω VR=6.0V 4.0 ns Pb Lead-free |
同様の部品番号 - DAN222 |
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同様の説明 - DAN222 |
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