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FM18L08 データシート(PDF) 6 Page - List of Unclassifed Manufacturers

部品番号 FM18L08
部品情報  256Kb 2.7-3.6V Bytewide FRAM Memory
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Ramtron
FM18L08
23 March 2001
6/11
Electrical Specifications
Absolute Maximum Ratings
Description
Ratings
Ambient storage or operating temperature
-40
°C to + 85°C
Voltage on any pin with respect to ground
-1.0V to +5.0V
Lead temperature (Soldering, 10 seconds)
300
° C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only, and the functional operation of the device at these or any other conditions above those listed in
the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for
extended periods may affect device reliability
DC Operating Conditions TA = -40
° C to + 85° C, VDD = 2.7V to 3.65V unless otherwise specified
Symbol
Parameter
Min
Typ
Max
Units
Notes
VDD
Power Supply
2.7
3.65
V
1
IDD
VDD Supply Current - Active
5
15
mA
2
ISB
Standby Current - TTL
400
µA
3
ISB
Standby Current - CMOS
7
15
µA
4
ILI
Input Leakage Current
10
µA
5
ILO
Output Leakage Current
10
µA
5
VIL
Input Low Voltage
-1.0
0.8
V
1
VIH
Input High Voltage
2.0
VDD + 1.0
V
1
VOL
Output Low Voltage
0.4
V
1,6
VOH
Output High Voltage
2.4V
V
1,7
Notes
1.
Referenced to VSS.
2.
VDD = 3.65V, /CE cycling at minimum cycle time. All inputs at CMOS levels, all outputs unloaded.
3.
VDD = 3.65V, /CE at VIH, All inputs at TTL levels, all outputs unloaded.
4.
VDD = 3.65V, /CE at VDD, All inputs at CMOS levels, all outputs unloaded.
5.
VIN, VOUT between VDD and VSS.
6.
IOL = 3.2 mA
7.
IOH = -1.0 mA


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