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FM18L08-70-S データシート(PDF) 7 Page - List of Unclassifed Manufacturers

部品番号 FM18L08-70-S
部品情報  256Kb 2.7-3.6V Bytewide FRAM Memory
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Ramtron
FM18L08
23 March 2001
7/11
Read Cycle AC Parameters TA = -40
° C to + 85° C, VDD = 2.7V to 3.65V unless otherwise specified
Symbol
Parameter
Min
Max
Units
Notes
tCE
Chip Enable Access Time ( to data valid)
70
ns
tCA
Chip Enable Active Time
70
10,000
ns
tRC
Read Cycle Time
130
ns
tPC
Precharge Time
60
ns
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
10
ns
tOE
Output Enable Access Time
10
ns
tHZ
Chip Enable to Output High-Z
15
ns
1
tOHZ
Output Enable to Output High-Z
15
ns
1
Write Cycle AC Parameters TA = -40
° C to + 85° C, VDD = 2.7V to 3.65V unless otherwise specified
Symbol
Parameter
Min
Max
Units
Notes
tCA
Chip Enable Active Time
70
10,000
ns
tCW
Chip Enable to Write High
70
ns
tWC
Write Cycle Time
130
ns
tPC
Precharge Time
60
ns
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
10
ns
tWP
Write Enable Pulse Width
40
ns
tDS
Data Setup
40
ns
tDH
Data Hold
0
ns
tWZ
Write Enable Low to Output High Z
15
ns
1
tWX
Write Enable High to Output Driven
10
ns
1
tHZ
Chip Enable to Output High-Z
15
ns
1
tWS
Write Setup
0
ns
2
tWH
Write Hold
0
ns
2
Notes
1
This parameter is periodically sampled and not 100% tested.
2
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. There is no timing
specification associated with this relationship.
Data Retention TA = -40
° C to + 85° C, VDD = 2.7V to 3.65V unless otherwise specified
Parameter
Min
Units
Notes
Data Retention
10
Years
1
Endurance
1E16
Cycles
2
Notes
1.
Data retention is specified at 85
° C.
2.
Endurance is the guaranteed number of read- or write-cycles per address that can be performed while maintaining
the specified data retention. It should be impossible to reach this limit for most applications.
Power Cycle Timing TA = -40
° C to + 85° C, VDD = 2.7V to 3.65V unless otherwise specified
Symbol
Parameter
Min
Units
Notes
tPU
VDD Min to First Access Start
1
µS
tPD
Last Access Complete to VDD Min
0
µS
Capacitance TA = 25
° C , f=1.0 MHz, VDD = 3V
Symbol
Parameter
Max
Units
Notes
CI/O
Input Output Capacitance
8
pF
CIN
Input Capacitance
6
pF


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