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FM18L08-70-S データシート(PDF) 1 Page - List of Unclassifed Manufacturers |
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FM18L08-70-S データシート(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 11 page Preliminary This data sheet contains specifications for a product under development. Ramtron International Corporation Characterization is not complete; specifications may change without notice. 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058 www.ramtron.com 23 March 2001 1/11 FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85 ° C • Unlimited read/write cycles • NoDelay™ write • Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM • No battery concerns • Monolithic reliability • True surface mount solution, no rework steps • Superior for moisture, shock, and vibration • Resistant to negative voltage undershoots SRAM & EEPROM Compatible • JEDEC 32Kx8 SRAM & EEPROM pinout • 70 ns access time • 130 ns cycle time • Equal access & cycle time for reads and writes Low Power Operation • 2.7V to 3.6V operation • 15 mA active current • 15 µA standby current Industry Standard Configuration • Industrial temperature -40 ° C to +85° C • 28-pin SOP or DIP Description The FM18L08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Fast-write time and practically unlimited read/write endurance make it superior to other types of nonvolatile memory and a good substitute for ordinary SRAM. In-system operation of the FM18L08 is very similar to other RAM based devices. Memory read- and write- cycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM18L08 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions. These capabilities make the FM18L08 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM18L08 offers guaranteed operation over an industrial temperature range of -40°C to +85°C. Pin Configuration A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 DQ7 CE A10 OE A11 A9 A8 A13 WE VDD Ordering Information FM18L08-70-S 70 ns access, 28-pin SOP FM18L08-70-P 70 ns access, 28-pin DIP |
同様の部品番号 - FM18L08-70-S |
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同様の説明 - FM18L08-70-S |
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