BAS70 datasheet(3/14 Pages) STMICROELECTRONICS

部品番号	BAS70

部品情報	Low forward and reverse recovery times

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BAS70

Characteristics

Doc ID 12563 Rev 2

3/14

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Average forward current versus

ambient temperature (

δ = 1)

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

d=0.05

d=0.1

d=0.2

d=0.5

d=1

T

d=tp/T

tp

P(W)

IF(AV)(A)

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0

25

50

75

100

125

150

I

F(AV)(A)

T

d=tp/T

tp

Tamb(°C)

Figure 3.

Reverse leakage current versus

reverse applied voltage

(typical values)

Figure 4.

Reverse leakage current versus

junction temperature

(typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

1020

304050

6070

IR(µA)

Tj=150 °C

Tj=85 °C

Tj=25 °C

VR(V)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

25

50

75

100

125

150

IR(µA)

V

R=50 V

Tj(°C)

Figure 5.

Junction capacitance versus

reverse applied voltage

(typical values)

Figure 6.

Forward voltage drop versus

forward current (typical values)

0.1

1.0

10.0

0.1

1.0

10.0

100.0

C(pF)

F=1 MHz

V

OSC=30 mVRMS

Tj=25 °C

VR(V)

1.E-01

1.E+00

1.E+01

1.E+02

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IFM(mA)

Tj=85°C

Tj=-40 °C

Tj=150 °C

VFM(V)

同様の部品番号 - BAS70

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NXP Semiconductors	BAS70	61Kb / 8P	Schottky barrier double diodes 1999 Jun 01
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Taiwan Semiconductor Co...	BAS70	114Kb / 2P	200m Watts Surface Mount Schottky Barrier Diode
Weitron Technology	BAS70	249Kb / 2P	Surface Mount Schottky Barrier Diodes
Taiwan Semiconductor Co...	BAS70	187Kb / 4P	225mW SMD Switching Diode

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