データシートサーチシステム |
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TLP3064 データシート(PDF) 3 Page - Toshiba Semiconductor |
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TLP3064 データシート(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TLP3064 2002-09-25 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF=10mA 1.2 1.4 1.7 V Reverse current IR VR=3 V ― ― 10 µA Capacitance CT V=0, f=1MHz ― 30 ― pF Peak off -state current IDRM VDRM=600V ― 10 1000 nA Peak on -state voltage VTM ITM=100mA ― ― 3.0 V Holding current IH ― ― 0.6 ― mA Critical rate of rise of off -state voltage dv / dt Vin=240rms Ta=85°C 200 500 ― V / µs Critical rate of rise of commutating voltage dv / dt(c) Vin=60Vrms IT=15mArms ― 0.2 ― V / µs Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Trigger LED current IFT VT=6V, resistive load ― ― 3 mA Inhibit voltage VIH IF=rated IFT ― ― 50 V Leakage in inhibited state IIH IF=rated IFT VT=rated VDRM ― ― 600 µA Capacitance input to output CS VS=0, f=1MHz ― 0.8 ― pF Isolation resistance RS VS=500V, R.H. ≤ 60% 1×10 12 10 14 ― Ω AC, 1 minute 5000 ― ― AC, 1 second, in oil ― 10000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 10000 ― Vdc |
同様の部品番号 - TLP3064 |
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同様の説明 - TLP3064 |
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