データシートサーチシステム |
|
FDD8878 データシート(PDF) 9 Page - Fairchild Semiconductor |
|
FDD8878 データシート(HTML) 9 Page - Fairchild Semiconductor |
9 / 12 page ©2005 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev. A3 www.fairchildsemi.com 9 PSPICE Electrical Model .SUBCKT FDD8878 2 1 3 ; rev February 2004 Ca 12 8 8.6e-10 Cb 15 14 7.2e-10 Cin 6 8 8e-10 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 11 7 17 18 32.97 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1 It 8 17 1 Lgate 1 9 5.4e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2e-9 RLgate 1 9 54 RLdrain 2 5 10 RLsource 3 7 20 Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMOD Mweak 16 21 8 8 MweakMOD Rbreak 17 18 RbreakMOD 1 Rdrain 50 16 RdrainMOD 6.9e-3 Rgate 9 20 3.1 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 Rsource 8 7 RsourceMOD 2.7e-3 Rvthres 22 8 RvthresMOD 1 Rvtemp 18 19 RvtempMOD 1 S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD Vbat 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*125),5))} .MODEL DbodyMOD D (IS=2.6E-12 IKF=8 N=1.01 RS=6.4e-3 TRS1=8e-4 TRS2=2e-7 + CJO=3.4e-10 M=0.53 TT=1e-17 XTI=2) .MODEL DbreakMOD D (RS=1.4 TRS1=1e-3 TRS2=-5e-6) .MODEL DplcapMOD D (CJO=3.4e-10 IS=1e-30 N=10 M=0.39) .MODEL MmedMOD NMOS (VTO=1.75 KP=7 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.1 T_ABS=25) .MODEL MstroMOD NMOS (VTO=2.2 KP=100 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25) .MODEL MweakMOD NMOS (VTO=1.45 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=31 RS=0.1 T_ABS=25) .MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-8e-7) .MODEL RdrainMOD RES (TC1=1e-4 TC2=7.5e-6) .MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6) .MODEL RsourceMOD RES (TC1=1.3e-2 TC2=2e-6) .MODEL RvthresMOD RES (TC1=-1.7e-3 TC2=-8e-6) .MODEL RvtempMOD RES (TC1=-2.2e-3 TC2=2e-7) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.5 VOFF=-3.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4.5) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-1) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=-2) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 |
同様の部品番号 - FDD8878 |
|
同様の説明 - FDD8878 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |