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データシートサーチシステム |
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データシートサーチシステム |
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HT82M9BEE データシート(PDF) 4 Page - Holtek Semiconductor Inc |
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HT82M9BEE データシート(HTML) 4 Page - Holtek Semiconductor Inc |
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4 / 44 page  D.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD Operating Voltage ¾¾ 3.3 ¾ 5.5 V IDD1 Operating Current (6MHz Crystal) 5V No load, fSYS=6MHz ¾ 79 mA IDD2 Operating Current (12MHz Crystal) 5V No load, fSYS=12MHz ¾ 816 mA ISTB1 Standby Current (WDT Enable) 5V No load, system HALT, USB suspend ¾¾ 250 mA ISTB2 Standby Current (WDT Disable) 5V ¾¾ 230 mA ISTB3 Standby Current (WDT Enable) 5V No load, system HALT, input/output mode, set SUSPEND2 [1CH].4 ¾¾ 30 mA ISTB4 Standby Current (WDT Disable) 5V ¾¾ 15 mA VIL1 Input Low Voltage for I/O Ports 5V ¾ 0 1.2 1.4 V VIH1 Input High Voltage for I/O Ports 5V ¾ 2.0 ¾ 5.0 V VIL2 Input Low Voltage (RES)5V ¾ 0 ¾ 0.4VDD V VIH2 Input High Voltage (RES)5V ¾ 0.9VDD ¾ VDD V IOL1 Output Sink Current for PA4~PA7, PB1, PB4~PB7, PC0~PC3 5V VOL=0.4V 24 ¾ mA IOH1 Output Source Current for PA4~PA7, PB1, PB4~PB7, PC0~PC3 5V VOH=3.4V -2.5 -4 ¾ mA IOL2 Output Sink Current for PA0~PA3, PB2~PB3 5V VOL=0.4V 10 15 ¾ mA IOH2 Output Source Current for PA0~PA3, PB2~PB3 5V VOH=3.4V 812 ¾ mA RPD Pull-down Resistance for PA0~PA3, PB2~PB3 5V ¾ 10 30 50 k W RPH1 Pull-high Resistance for DATA(*) ¾¾ 1.3 1.5 2.0 k W RPH2 Pull-high Resistance for CLK ¾¾ 2.0 4.7 6.0 k W RPH3 Pull-high Resistance for I/O Ports ¾¾ 30 50 70 k W VLVR Low Voltage Reset 5V ¾ 2.0 2.4 3 V Note: ²*² The DATA pull-high must be implemented by the external 1.5kW A.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions fSYS System Clock (Crystal OSC) 5V ¾ 6 ¾ 12 MHz fRCSYS RC Clock with 8-bit Prescaler Register 5V ¾ 032 ¾ kHz tWDT Watchdog Time-out Period (System Clock) ¾ Without WDT prescaler 1024 ¾¾ tRCSYS tRF USBD+, USBD- Rising & falling Time ¾¾ 75 ¾ 300 ns tRES External Reset Low Pulse Width ¾¾ 1 ¾¾ ms tSST System Start-up Timer Period ¾ Wake-up from HALT ¾ 1024 ¾ tSYS tOSC Crystal Setup ¾¾ ¾ 510 ms Note: Power-on period=tWDT+tSST+tOSC WDT Time-out in normal mode=1/fRCSYS ´256´WDTS+tWDT WDT Time-out in HALT mode=1/fRCSYS ´256´WDTS+tSST+tOSC HT82M9BEE/HT82M9BAE Rev. 1.50 4 December 22, 2008 |
同様の部品番号 - HT82M9BEE_08 |
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同様の説明 - HT82M9BEE_08 |
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