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BU2508DF データシート(PDF) 1 Page - NXP Semiconductors |
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BU2508DF データシート(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 700 V I C Collector current (DC) - 8 A I CM Collector current peak value - 15 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W V CEsat Collector-emitter saturation voltage I C = 4.5 A; IB = 1.12 A - 1.0 V I Csat Collector saturation current 4.5 - A V F Diode forward voltage I F = 4.5 A 1.6 2.0 V t f Fall time I Csat = 4.5 A; IB(end) = 1.1 A 0.4 0.6 µs PINNING - SOT199 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 700 V I C Collector current (DC) - 8 A I CM Collector current peak value - 15 A I B Base current (DC) - 4 A I BM Base current peak value - 6 A -I B(AV) Reverse base current average over any 20 ms period - 100 mA -I BM Reverse base current peak value 1 -5 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C 12 3 case b c e Rbe 1 Turn-off current. July 1998 1 Rev 1.600 |
同様の部品番号 - BU2508DF |
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同様の説明 - BU2508DF |
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