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STK14C88-3R35I データシート(PDF) 3 Page - List of Unclassifed Manufacturers

部品番号 STK14C88-3R35I
部品情報  32K x 8 AutoStore??nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM
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STK14C88-3R35I データシート(HTML) 3 Page - List of Unclassifed Manufacturers

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STK14C88-3
November 2003
3
Document Control # ML0015 rev 0.3
SRAM READ CYCLES #1 & #2
(VCC = 3.0V-3.6V)e
Note g: W and HSB must be high during SRAM READ cycles.
Note h: I/O state asumes E and G < VIL and W > VIH; device is continuously selected.
Note i:
Measured
± 200mV from steady state output voltage.
SRAM READ CYCLE #1: Address Controlledg, h
SRAM READ CYCLE #2: E Controlledg
NO.
SYMBOLS
PARAMETER
STK14C88-3-35 STK14C88-3-45 STK14C88-3-55
UNITS
#1, #2
Alt.
MIN
MAX
MIN
MAX
MIN
MAX
1tELQV
tACS
Chip Enable Access Time
35
45
55
ns
2tAVAVg
tRC
Read Cycle Time
35
45
55
ns
3tAVQVh
tAA
Address Access Time
35
45
55
ns
4tGLQV
tOE
Output Enable to Data Valid
15
20
25
ns
5tAXQXh
tOH
Output Hold after Address Change
5
5
5
ns
6tELQX
tLZ
Chip Enable to Output Active
5
5
5
ns
7tEHQZi
tHZ
Chip Disable to Output Inactive
13
15
20
ns
8tGLQX
tOLZ
Output Enable to Output Active
0
0
0
ns
9tGHQZi
tOHZ
Output Disable to Output Inactive
13
15
20
ns
10
tELICCHf
tPA
Chip Enable to Power Active
0
0
0
ns
11
tEHICCLf
tPS
Chip Disable to Power Standby
35
45
55
ns
DATA VALID
5
tAXQX
3
tAVQV
DQ (DATA OUT)
ADDRESS
2
tAVAV
6
tELQX
STANDBY
DATA VALID
4
tGLQV
DQ (DATA OUT)
E
ADDRESS
2
tAVAV
G
ICC
ACTIVE
10
tELICCH
11
tEHICCL
7
tEHQZ
8
tGLQX
1
tELQV
9
tGHQZ


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