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RGS80TS65D データシート(PDF) 1 Page - Rohm |
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RGS80TS65D データシート(HTML) 1 Page - Rohm |
1 / 13 page Data Sheet www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. RGS80TS65D 650V 40A Field Stop Trench IGBT *1 Pulse width limited by Tjmax. Operating Junction Temperature Tj -40 to +175 °C Storage Temperature Tstg -55 to +175 °C Diode Pulsed Forward Current IFP *1 120 A Power Dissipation TC = 25°C PD 272 W TC = 100°C PD 136 W Pulsed Collector Current ICP *1 120 A Diode Forward Current TC = 25°C IF 56 A TC = 100°C IF 30 A Collector Current TC = 25°C IC 73 A TC = 100°C IC 40 A Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V lAbsolute Maximum Ratings (at T C = 25°C unless otherwise specified) Parameter Symbol Value Unit Packing Code C11 Marking RGS80TS65D lPackaging Specifications Type Packaging Tube lApplications Reel Size (mm) - General Inverter Tape Width (mm) - for Automotive and Industrial Use Basic Ordering Unit (pcs) 450 1) Low Collector - Emitter Saturation Voltage 2) Short Circuit Withstand Time 8μs 3) Qualified to AEC-Q101 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant lFeatures lInner Circuit lOutline VCES 650V TO-247N IC(100°C) 40A VCE(sat) (Typ.) 1.65V PD 272W (1) Gate (2) Collector (3) Emitter *1 *1 Built in FRD (1) (2) (3) (1)(2)(3) 1/11 2016.07 - Rev.A |
同様の部品番号 - RGS80TS65D |
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同様の説明 - RGS80TS65D |
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