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RGT8NL65D データシート(PDF) 1 Page - Rohm |
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RGT8NL65D データシート(HTML) 1 Page - Rohm |
1 / 13 page www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. Datasheet RGT8NL65D 650V 4A Field Stop Trench IGBT *1 Pulse width limited by Tjmax. Operating Junction Temperature Tj 40 to +175 °C Storage Temperature Tstg 55 to +175 °C Diode Pulsed Forward Current IFP *1 12 A Power Dissipation TC = 25°C PD 65 W TC = 100°C PD 32 W 12 A Diode Forward Current TC = 25°C IF 7A TC = 100°C IF 4A Pulsed Collector Current ICP *1 Outline VCES 650V LPDL (TO-263L) IC(100°C) 4A VCE(sat) (Typ.) 1.65V PD 65W Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) 5) Pb - free Lead Plating ; RoHS Compliant Packaging Specifications Applications Type Packaging Taping General Inverter Reel Size (mm) 330 UPS Tape Width (mm) 24 Power Conditioner Basic Ordering Unit (pcs) 1,000 Welder Packing Code TL Marking RGT8NL65D Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V Collector Current TC = 25°C IC 8A TC = 100°C IC 4A (1) Gate (2) Collector (3) Emitter *1 *1 Built in FRD (1) (2) (3) (1) (2) (3) 1/11 2017.05 - Rev.A |
同様の部品番号 - RGT8NL65D |
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同様の説明 - RGT8NL65D |
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