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MC26LS30DR2 データシート(PDF) 10 Page - ON Semiconductor |
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MC26LS30DR2 データシート(HTML) 10 Page - ON Semiconductor |
10 / 16 page MC26LS30 http://onsemi.com 10 transients induced onto the drivers’ outputs from the external cable (from ESD, motor noise, nearby computers, etc.). Operating Temperature Range The maximum ambient operating temperature, listed as +85 °C, is actually a function of the system use (i.e., specifically how many drivers within a package are used) and at what current levels they are operating. The maximum power which may be dissipated within the package is determined by: PDmax + TJmax * TA R qJA where RθJA = package thermal resistance which is typically: 120 °C/W for the SOIC (D) package, TJmax = max. allowable junction temperature (150°C) TA = ambient air temperature near the IC package. 1) Differential Mode Power Dissipation For the differential mode, the power dissipated within the package is calculated from: PD + [(VCC * VOD) IO ] (each driver) ) (VCC IB) where: VCC = the supply voltage VOD = is taken from Figure 6 for the known value of IO IB = the internal bias current (Figure 7) As indicated in the equation, the first term (in brackets) must be calculated and summed for each of the two drivers, while the last term is common to the entire package. Note that the term (VCC –VOD) is constant for a given value of IO and does not vary with VCC. For an application involving the following conditions: TA = +85°C, IO = –60 mA (each driver), VCC = 5.25 V, the suitability of the package types is calculated as follows. The power dissipated is: PD + [3.0 V 60 mA 2] ) (5.25 V 18 mA) PD + 454 mW The junction temperature calculates to: TJ + 85°C ) (0.454 W 120 °C W) + 139°C for the SOIC package. Since the maximum allowable junction temperature is not exceeded in any of the above cases, either package can be used in this application. 2) Single–Ended Mode Power Dissipation For the single–ended mode, the power dissipated within the package is calculated from: PD + (IB ) VCC) ) (IB * VEE) ) [(IO (VCC * VOH)](each driver) The above equation assumes IO has the same magnitude for both output states, and makes use of the fact that the absolute value of the graphs of Figures 10 and 11 are nearly identical. IB+ and IB– are obtained from the right half of Figures 12 and 13, and (VCC – VOH) can be obtained from Figure 10. Note that the term (VCC – VOH) is constant for a given value of IO and does not vary with VCC. For an application involving the following conditions: TA = +85°C, IO = –60 mA (each driver), VCC = 5.25 V, VEE = –5.25 V, the suitability of the package types is calculated as follows. The power dissipated is: PD + 490 mW PD + (24 mA 5.25 V) ) (*3.0 mA *5.25 V) ) [ 60 mA 1.45 V 4.0 ] The junction temperature calculates to: TJ + 85°C ) (0.490 W 120 °C W) + 144°C for the SOIC package. Since the maximum allowable junction temperature is not exceeded in any of the above cases, either package can be used in this application. |
同様の部品番号 - MC26LS30DR2 |
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同様の説明 - MC26LS30DR2 |
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