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RB521SM9-30 データシート(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd

部品番号 RB521SM9-30
部品情報  Schottky Barrier Diode
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メーカー  LUGUANG [Shenzhen Luguang Electronic Technology Co., Ltd]
ホームページ  http://www.luguang.cn/web_en/index.html
Logo LUGUANG - Shenzhen Luguang Electronic Technology Co., Ltd

RB521SM9-30 データシート(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd

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Absolute Maximum Ratings （Ta = 25 ℃）
Symbol
Parameter
Value
Units
V
RRM
Repetitive Peak Reverse Voltage
40
V
V
R
Reverse Voltage
30
V
I
O
Continuous Forward Current
200
mA
I
FSM
Non-Repetitive Peak Forward Current *1
1
A
T
J
Junction Temperature
125
℃
T
STG
Storage Temperature
-55 to +125
℃
*1: 8.3ms Single Half Sine-Wave
Electrical Characteristics （Ta = 25 ℃）
Symbol
Parameter
Conditions
Min
TYP
Max
Units
V
F
Forward Voltage
I
F = 10mA
I
F = 200mA
0.35
0.50
V
V
BV
R
Breakdown Voltage
I
R = 500μA
40
V
I
R
Reverse Current
V
R = 10V
V
R = 20V
30
100
μA
μA
Schottky Barrier Diode
RB521SM9-30
◇ Low current rectification
◇ Low forward voltage
◇ SOD923 Micro SMD package (Fig-1)
Dimensions: 1.0 mm x 0.6 mm (0.039” x 0.024”)
◇ RoHS compliant
◇ UL-94 V-0 / Green EMC
◇ Matte Tin Lead finish (Pb-Free)
◇ Moisture Level Sensitivity 1
◇ Cathode Band / Device marking:
Device Marking Code
RB521SM9-30
C7
Fig –1 Package SOD923
ht
t
p
:
//
www.lgesemi.com
mail:lge@lgesemi.com
Revision:201
70701-P1


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