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FSBM30SH60A データシート(PDF) 6 Page - Fairchild Semiconductor

部品番号 FSBM30SH60A
部品情報  SPMTM (Smart Power Module)
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FSBM30SH60A データシート(HTML) 6 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
Rev. E, August 2003
Absolute Maximum Ratings
Thermal Resistance
Note:
2. For the measurement point of case temperature(TC), please refer to Fig. 2.
3. The thickness of thermal grease should not be more than 100um.
Electrical Characteristics (T
J = 25°C, Unless Otherwise Specified)
Inverter Part
Note:
4. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Fig. 4.
Item
Symbol
Condition
Min. Typ.
Max.
Unit
Junction to Case Thermal
Resistance
Rth(j-c)Q Each IGBT under Inverter Operating Condition
--
2.0
°C/W
Rth(j-c)F Each FWDi under Inverter Operating Condition
-
-
3.2
°C/W
Contact Thermal
Resistance
Rth(c-f)
Ceramic Substrate (per 1 Module)
Thermal Grease Applied (Note 3)
-
-
0.06
°C/W
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Collector - Emitter
Saturation Voltage
VCE(SAT) VCC = VBS = 15V
VIN = 0V
IC = 30A, TJ = 25°C
-
-
2.5
V
FWDi Forward Voltage
VFM
VIN = 5V
IC = 30A, TJ = 25°C
-
-
2.6
V
Switching Times
tON
VPN = 300V, VCC = VBS = 15V
IC = 30A, TJ = 25°C
VIN = 5V ↔ 0V, Inductive Load
(High, Low-side)
(Note 4)
-0.39
-
us
tC(ON)
-0.2
-
us
tOFF
-0.85
-
us
tC(OFF)
-0.24
-
us
trr
-0.13
-
us
Collector - Emitter
Leakage Current
ICES
VCE = VCES, TJ = 25°C
-
-
250
µA


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