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ST1803DFH データシート(PDF) 2 Page - STMicroelectronics |
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ST1803DFH データシート(HTML) 2 Page - STMicroelectronics |
2 / 6 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 3.125 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 1500 V VCE = 1500 V Tj = 125 oC 1 2 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 4 V 130 400 mA V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 700 mA 7 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 4 A IB = 0.8 A IC = 4 A IB = 1.2 A 35 1.5 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 4 A IB = 0.8 A 1.2 V hFE ∗ DC Current Gain IC = 1 A VCE = 5 V IC = 4.5 A VCE = 1 V IC = 4.5 A VCE = 5 V 10 5 15 5 20 9 VF Diode Forward Voltage IF = 5 A 1.5 2 V ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 4 A IBon(END) = 0.8 A LB = 5 µH VBB = -2.5 V f = 16 KHz (see figure 1) 2.7 0.3 4 0.6 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance ST1803DFH 2/6 |
同様の部品番号 - ST1803DFH |
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同様の説明 - ST1803DFH |
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