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TC58FVB160AFT-10 データシート(PDF) 1 Page - Toshiba Semiconductor |
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TC58FVB160AFT-10 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 41 page TC58FVT160/B160AFT/AXB-70,-10 2001-09-05 1/41 • Block erase architecture 1 × 16 Kbytes / 2 × 8 Kbytes 1 × 32 Kbytes / 31 × 64 Kbytes • Boot block architecture TC58FVT160AFT/AXB: top boot block TC58FVB160AFT/AXB: bottom boot block • Mode control Compatible with JEDEC standard commands • Erase/Program cycles 105 cycles typ. • Access time 70 ns (CL: 30 pF) 100 ns (CL: 100 pF) • Power consumption 5 µA (Standby) 30 mA (Read operation) 15 mA (Program/Erase operations) • Package TSOPI48-P-1220-0.50 (weight: 0.51 g) P-TFBGA48-0608-0.80AZ (weight: TBD) TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2M × 8 BITS / 1M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58FVT160/B160A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. FEATURES • Power supply voltage VDD = 2.7 V~3.6 V • Operating temperature Ta = −40°C~85°C • Organization 2M × 8 bits / 1M × 16 bits • Functions Auto Program, Auto Erase Fast Program Mode Program Suspend/Resume Erase Suspend/Resume data polling / Toggle bit block protection Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes PIN ASSIGNMENT (TOP VIEW) … … … …TC58FVT160/B160AFT PIN NAMES A-1, A0~A19 Address Input DQ0~DQ15 Data Input/Output CE Chip Enable Input OE Output Enable Input BYTE Word/Byte Select Input WE Write Enable Input BY / RY Ready/Busy Output RESET Hardware Reset Input NC Not Connected VDD Power Supply VSS Ground BYTE 1 48 2 47 3 46 4 45 5 44 6 43 7 42 8 41 9 40 10 39 11 38 12 37 13 36 14 35 15 34 16 33 17 32 18 31 19 30 20 29 21 28 22 27 23 26 24 25 A16 VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDD DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 VSS A0 OE CE A15 A14 A13 A12 A11 A10 A9 A8 A19 NC NC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 WE RESET BY / RY • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 000707EBA2 |
同様の部品番号 - TC58FVB160AFT-10 |
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同様の説明 - TC58FVB160AFT-10 |
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