TC58FVM7B2AFT80 datasheet(1/68 Pages) TOSHIBA

部品番号	TC58FVM7B2AFT80

部品情報	128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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TC58FVM7(T/B)2AFT(65/80)

2002-10-24 1/68

• Access Time (Random/Page)

TC58FVM7T2A/B2AFT65

TC58FVM7T2A/B2AFT80

VDD

CL

= 30 pF CL = 100 pF CL = 30 pF CL = 100 pF

2.7~3.6V

65 ns/25 ns

70 ns/30 ns

80 ns/30 ns

85 ns/35 ns

2.3~3.6V

70 ns/30 ns

75 ns/35 ns

85 ns/35 ns

90 ns/40 ns

• Power consumption

10

µA (Standby)

15 mA (Program/Erase operation)

55 mA (Random Read operation)

11 mA (Address Increment Read operation)

5 mA (Page Read operation)

• Package

TSOPⅠ56-P-1420-0.50A (weight: 0.61g)

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

128-MBIT (16M

× 8 BITS / 8M × 16 BITS) CMOS FLASH MEMORY

DESCRIPTION

The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash

memory organized as 16777216 words

× 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features

commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands

are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The

TC58FVM7T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or

Erase operation.

FEATURES

• Power supply voltage

VDD = 2.3 V~3.6 V

• Operating temperature

Ta

= −40°C~85°C

• Organization

16M

× 8 bits/8M × 16 bits

• Functions

• Simultaneous Read/Write

Page Read

Auto Program, Auto Page Program

Auto Block Erase, Auto Chip Erase

Fast Program Mode / Acceleration Mode

Program Suspend/Resume

Erase Suspend/Resume

data polling/Toggle bit

block protection, boot block protection

Automatic Sleep, support for hidden ROM area

common flash memory interface (CFI)

Byte/Word Modes

• Block erase architecture

8

× 8 Kbytes/255 × 64 Kbytes

• Boot block architecture

TC58FVM7T2A: top boot block

TC58FVM7B2A: bottom boot block

• Mode control

Compatible with JEDEC standard commands

• Erase/Program cycles

105 cycles typ.

同様の部品番号 - TC58FVM7B2AFT80

メーカー	部品番号	データシート	部品情報
Toshiba Semiconductor	TC58FVM7B2AFT80	622Kb / 69P	128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY 2004-09-01

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