TC58DAM82F1FT00 datasheet(5/34 Pages) TOSHIBA

部品番号	TC58DAM82F1FT00

部品情報	128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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5 / 34 page

TC58DVM72A1FT00/ TC58DVM72F1FT00

TC58DAM72A1FT00/ TC58DAM72F1FT00

2003-01-24

5/34

AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS

(Ta

0° to 70°C, VCC

2.7 V to 3.6 V)

SYMBOL

PARAMETER

MIN

MAX

UNIT

NOTES

tCLS

CLE Setup Time

0

ns

tCLH

CLE Hold Time

10

ns

tCS

CE

Setup Time

0

ns

tCH

CE

Hold Time

10

ns

tWP

Write Pulse Width

25

ns

tALS

ALE Setup Time

0

ns

tALH

ALE Hold Time

10

ns

tDS

Data Setup Time

20

ns

tDH

Data Hold Time

10

ns

tWC

Write Cycle Time

50

ns

tWH

WE

High Hold Time

15

ns

tWW

WP

High to WE

Low

100

ns

tRR

Ready to RE Falling Edge

20

ns

tRP

Read Pulse Width

35

ns

tRC

Read Cycle Time

50

ns

tREA

RE

Access Time (Serial Data Access)

35

ns

tCEA

CE

Access Time (Serial Data Access,ID Read)

45

ns

tALEA

ALE Access Time (ID Read)

ns

tCEH

CE

High Time for Last Address in Serial Read Cycle

Ns

(2)

tREAID

RE

Access Time (ID Read)

35

ns

tOH

Data Output Hold Time

10

ns

tRHZ

RE

High to Output High Impedance

30

ns

tCHZ

CE

High to Output High Impedance

20

ns

tREH

RE

High Hold Time

15

ns

tIR

Output-High-impedance-to- RE Falling Edge

0

ns

tRSTO

RE

Access Time (Status Read)

35

ns

tCSTO

CE

Access Time (Status Read)

45

ns

tRHW

RE

High to WE

Low

0

ns

tWHC

WE

High to CE Low

30

ns

tWHR

WE

High to RE Low

30

ns

tR

Memory Cell Array to Starting Address

25

s

tWB

WE

High to Busy

200

ns

tAR2

ALE Low to RE Low (Read Cycle)

50

ns

tRB

RE

Last Clock Rising Edge to Busy(in Sequential Read)

200

ns

tCRY

CE

High to Ready(When interrupted by CE in Read Mode)

1+

tr(

BY

/

RY

)

s

(1)(2)

tRST

Device Reset Time (Read/Program/Erase)

6/10/500

s

AC TEST CONDITIONS

CONDITION

PARAMETER

TC58DVxxxxx

TC58DAxxxx

Input level

2.4 V, 0.4 V

VCCQ -0.2 V, 0.2 V

Input pulse rise and fall time

3 ns

Input comparison level

1.5 V, 1.5 V

0.9 V, 0.9 V

Output data comparison level

1.5 V, 1.5 V

0.9 V, 0.9 V

Output load

CL (100 pF)

1 TTL

CL (30 pF)

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TC58DAM82F1FT00 データシート(PDF) 5 Page - Toshiba Semiconductor

TC58DAM82F1FT00 データシート(HTML) 5 Page - Toshiba Semiconductor

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同様の部品番号 - TC58DAM82F1FT00

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