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FDS6675A データシート(PDF) 3 Page - Fairchild Semiconductor |
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FDS6675A データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDS6675A Rev C (W) Typical Characteristics 0 10 20 30 40 50 00.5 1 1.5 22.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) V GS = -10V -6.0V -4.0V -4.5V -3.0V -3.5V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 102030 4050 -ID, DRAIN CURRENT (A) VGS = - 3.5V -4.5V -6.0V -10V -4.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( oC) ID = -11A VGS = - 10V 0 0.01 0.02 0.03 0.04 0.05 246 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -5.5A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 50 11.5 2 2.533.5 4 -V GS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC VDS = -10V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
同様の部品番号 - FDS6675A |
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同様の説明 - FDS6675A |
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