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LMK60E2-156M25SIAT データシート(PDF) 4 Page - Texas Instruments |
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LMK60E2-156M25SIAT データシート(HTML) 4 Page - Texas Instruments |
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4 / 19 page  4 LMK60E2-100M, LMK60E2-125M, LMK60E2-156M, LMK60E0-156M LMK60E0-212M, LMK60I2-100M, LMK60I2-322M SNAS718C – DECEMBER 2016 – REVISED DECEMBER 2017 www.ti.com Product Folder Links: LMK60E2-100M LMK60E2-125M LMK60E2-156M LMK60E0-156M LMK60E0-212M LMK60I2- 100M LMK60I2-322M Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VDD Device supply voltage 3.135 3.3 3.465 V TA Ambient temperature –40 25 85 °C TJ Junction temperature 105 °C tRAMP VDD power-up ramp time 0.1 100 ms (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. (2) The package thermal resistance is calculated on a 4 layer JEDEC board. (3) Connected to GND with 2 thermal vias (0.3-mm diameter). (4) ψJB (junction to board) is used when the main heat flow is from the junction to the GND pad. Please refer to Thermal Considerations section for more information on ensuring good system reliability and quality. 6.4 Thermal Information THERMAL METRIC(1) LMK60EX (2) (3) (4) UNIT SIA (QFM) 6 PINS Airflow (LFM) 0 RθJA Junction-to-ambient thermal resistance 74.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 46.7 °C/W RθJB Junction-to-board thermal resistance 49.0 °C/W ψJT Junction-to-top characterization parameter 14.8 °C/W ψJB Junction-to-board characterization parameter 48.7 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W (1) Refer to Parameter Measurement Information for relevant test conditions. (2) On-chip power dissipation should exclude 40 mW, dissipated in the 150 Ω termination resistors, from total power dissipation. (3) Excludes load current. 6.5 Electrical Characteristics - Power Supply (1) VDD = 3.3 V ± 5%, TA = -40C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDD Device current consumption LVPECL(2) 95 110 mA LVDS 85 100 HCSL(3) 90 105 IDD-PD Device current consumption when output is disabled OE = GND 70 mA (1) Refer to Parameter Measurement Information for relevant test conditions. (2) An output frequency over fOUT max spec is possible, but output swing may be less than VOD min spec. (3) Ensured by characterization. 6.6 LVPECL Output Characteristics (1) VDD = 3.3 V ± 5%, TA = -40C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT fOUT Output frequency(2) 400 MHz VOD Output voltage swing (VOH – VOL) (2) 700 950 1200 mV VOUT, DIFF, PP Differential output peak-to-peak swing 2 × |VOD| V VOS Output common-mode voltage VDD – 1.45 V tR / tF Output rise/fall time (20% to 80%)(3) 260 350 ps ODC Output duty cycle(3) 45% 55% |
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