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IRF3704Z データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF3704Z データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF3704Z,IIRF3704Z · FEATURES · Low drain-source on-resistance: RDS(on) ≤7.9mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · reliable device for use in a wide variety of applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 20 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 67 A IDM Drain Current-Single Pulsed 260 A PD Total Dissipation @TC=25℃ 57 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 2.65 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62 ℃ /W |
同様の部品番号 - IRF3704Z |
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同様の説明 - IRF3704Z |
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