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MC100EP51DT データシート(PDF) 4 Page - ON Semiconductor |
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MC100EP51DT データシート(HTML) 4 Page - ON Semiconductor |
4 / 8 page MC10EP51, MC100EP51 http://onsemi.com 4 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 12.) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 26 34 44 26 35 45 28 37 47 mA VOH Output HIGH Voltage (Note 13.) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV VOL Output LOW Voltage (Note 13.) 1355 1480 1605 1355 1480 1605 1355 1480 1605 mV VIH Input HIGH Voltage (Single Ended) 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage (Single Ended) 1355 1675 1355 1675 1355 1675 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential) (Note 14.) 2.0 3.3 2.0 3.3 2.0 3.3 V IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current 0.5 0.5 0.5 µA NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 12. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to –2.2 V. 13. All loading with 50 ohms to VCC–2.0 volts. 14. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. 100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 15.) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 26 34 44 26 35 45 28 37 47 mA VOH Output HIGH Voltage (Note 16.) 3855 3980 4105 3855 3980 4105 3855 3980 4105 mV VOL Output LOW Voltage (Note 16.) 3055 3180 3305 3055 3180 3305 3055 3180 3305 mV VIH Input HIGH Voltage (Single Ended) 3775 4120 3775 4120 3775 4120 mV VIL Input LOW Voltage (Single Ended) 3055 3375 3055 3375 3055 3375 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential) (Note 17.) 2.0 5.0 2.0 5.0 2.0 5.0 V IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current 0.5 0.5 0.5 µA NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 15. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to –0.5 V. 16. All loading with 50 ohms to VCC–2.0 volts. 17. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. 100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = –5.5 V to –3.0 V (Note 18.) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 26 34 44 26 35 45 28 37 47 mA VOH Output HIGH Voltage (Note 19.) –1145 –1020 –895 –1145 –1020 –895 –1145 –1020 –895 mV VOL Output LOW Voltage (Note 19.) –1945 –1820 –1695 –1945 –1820 –1695 –1945 –1820 –1695 mV VIH Input HIGH Voltage (Single Ended) –1225 –880 –1225 –880 –1225 –880 mV VIL Input LOW Voltage (Single Ended) –1945 –1625 –1945 –1625 –1945 –1625 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential) (Note 20.) VEE+2.0 0.0 VEE+2.0 0.0 VEE+2.0 0.0 V IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current 0.5 0.5 0.5 µA NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 18. Input and output parameters vary 1:1 with VCC. 19. All loading with 50 ohms to VCC–2.0 volts. 20. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. |
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