SI6968BEDQ-T1 datasheet(2/5 Pages) VISHAY

部品番号	SI6968BEDQ-T1

部品情報	Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection

Download	5 Pages

Scroll/Zoom	100%

メーカー	VISHAY [Vishay Siliconix]

ホームページ	http://www.vishay.com

Logo

2 / 5 page

Si6968BEDQ

Vishay Siliconix

www.vishay.com

2

Document Number: 72274

S-31362—Rev. A, 30-Jun-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

1.6

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "4.5 V

"200

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 70_C

25

mA

On-State Drain Currentb

ID(on)

VDS v 5 V, VGS = 4.5 V

30

A

Drain Source On State Resistanceb

rDS( )

VGS = 4.5 V, ID = 6.5 A

0.0165

0.022

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = 2.5 V, ID = 5.5 A

0.023

0.030

W

Forward Transconductanceb

gfs

VDS = 10 V, ID = 6.5 A

30

S

Diode Forward Voltageb

VSD

IS = 1.5 A, VGS = 0 V

0.71

1.2

V

Dynamica

Total Gate Charge

Qg

12

18

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 6.5 A

2.2

nC

Gate-Drain Charge

Qgd

3.6

Turn-On Delay Time

td(on)

245

365

Rise Time

tr

VDD = 10 V, RL = 10 W

330

495

ns

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

860

1300

ns

Fall Time

tf

510

765

Notes

a.

For design aid only; not subject to production testing.

b.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0369

12

15

0.01

100

10,000

TJ = 25_C

Gate Current vs. Gate-Source Voltage

0

2

4

6

8

10

0

3

6

9

12

15

18

Gate-Current vs. Gate-Source Voltage

VGS - Gate-to-Source Voltage (V)

0.1

1

10

1,000

VGS - Gate-to-Source Voltage (V)

TJ = 150_C

同様の部品番号 - SI6968BEDQ-T1

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI6968BEDQ-T1	224Kb / 11P	Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection Rev. C, 02-Jun-08
	SI6968BEDQ-T1	256Kb / 11P	Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection 01-Jan-2022
	SI6968BEDQ-T1-GE3	224Kb / 11P	Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection Rev. C, 02-Jun-08
	SI6968BEDQ-T1-GE3	256Kb / 11P	Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection 01-Jan-2022

More results

同様の説明 - SI6968BEDQ-T1

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI6968BEDQ	224Kb / 11P	Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection Rev. C, 02-Jun-08
Vishay Siliconix	SI6968BEDQ	256Kb / 11P	Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection 01-Jan-2022
Guangdong Kexin Industr...	KI6968BEDQ	53Kb / 2P	Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
DinTek Semiconductor Co...	DTM8201	2Mb / 8P	Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
VBsemi Electronics Co.,...	VBC6N2006	652Kb / 8P	Dual N-Channel MOSFET Common Drain, ESD Protection
Vishay Siliconix	SI6966EDQ	104Kb / 5P	Dual N-Channel 2.5-V (G-S) MOSFET, ESD Protected 01-Jan-2022
	SI6924AEDQ	231Kb / 12P	N-Channel 2.5-V (G-S) Battery Switch, ESD Protection Rev. B, 12-May-08
	SI6924EDQ	49Kb / 5P	N-Channel 2.5-V (G-S) Battery Switch, ESD Protection Rev. C, 30-Nov-98
	SI6924AEDQ	52Kb / 6P	N-Channel 2.5-V (G-S) Battery Switch, ESD Protection Rev. A, 13-May-03
	SI6924AEDQ	119Kb / 7P	N-Channel 2.5-V (G-S) Battery Switch, ESD Protection 01-Jan-2022