SI6968BEDQ-T1 datasheet(3/5 Pages) VISHAY

部品番号	SI6968BEDQ-T1

部品情報	Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection

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メーカー	VISHAY [Vishay Siliconix]

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Si6968BEDQ

Vishay Siliconix

Document Number: 72274

S-31362—Rev. A, 30-Jun-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

5

10

15

20

25

30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.01

0.02

0.03

0.04

0.05

0.06

0

5

10

15

20

25

30

0

5

10

15

20

25

30

0

1234

5

0

1

2

3

4

5

0

3

6

9

12

15

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 5 thru 3 V

25

_C

TC = 125_C

VDS = 10 V

ID = 6.5 A

VGS = 4.5 V

ID = 6.5 A

VGS = 4.5 V

VGS = 2.5 V

2 V

-55

_C

2.5 V

Output Characteristics

Transfer Characteristics

Gate Charge

On-Resistance vs. Drain Current

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

ID - Drain Current (A)

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

1.2

1.5

0.1

10

40

0

0.3

0.6

0.9

TJ = 25_C

TJ = 150_C

Source-Drain Diode Forward Voltage

VSD - Source-to-Drain Voltage (V)

1

同様の部品番号 - SI6968BEDQ-T1

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI6968BEDQ-T1	224Kb / 11P	Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection Rev. C, 02-Jun-08
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	SI6968BEDQ-T1-GE3	256Kb / 11P	Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection 01-Jan-2022

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同様の説明 - SI6968BEDQ-T1

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