ACE14409TFM+H datasheet(1/7 Pages) ACE

部品番号	ACE14409TFM+H

部品情報	P-Channel Enhancement Mode Field Effect Transistor

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メーカー	ACE [ACE Technology Co., LTD.]

ホームページ	http://www.ace-ele.com

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ACE14409T

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE14409T uses advanced trench technology to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

Features

 V

DS(V)=-30V

 I

D=-12A

 R

DS(ON)＜12mΩ (VGS=-10V)

 R

DS(ON)＜18mΩ (VGS=-4.5V)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Drain Current (Continuous) * AC

TA=25

OC

ID

-12

A

TA=100

OC

-7.5

Drain Current (Pulse) * B

IDM

-48

Power Dissipation

TA=25

OC

PD

3

W

TA=100

OC

1.8

Operating and Storage Temperature Range

TJ,TSTG

-55 to 150

OC

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Packaging Type

SOP-8

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