データシートサーチシステム |
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SI7540DP データシート(PDF) 1 Page - Vishay Siliconix |
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SI7540DP データシート(HTML) 1 Page - Vishay Siliconix |
1 / 8 page FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency APPLICATIONS D Point-of-Load Synchronous Rectifier - 5-V or 3.3-V BUS Step Down -Qg Optimized for 500-kHz Operation D Synchronous Buck, Shoot-Thru Resistant Si7540DP Vishay Siliconix New Product Document Number: 71911 S-22387—Rev.. C, 16-Dec-02 www.vishay.com 1 N- and P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 N-Channel 12 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 P-Channel -12 0.053 @ VGS = -2.5 V -6.9 N-Channel MOSFET D1 G1 S1 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 6.15 mm 5.15 mm Bottom View PowerPAK t SO-8 S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel P-Channel Parameter Symbol 10 secs Steady State 10 secs Steady State Unit Drain-Source Voltage VDS 12 -12 Gate-Source Voltage VGS "8 "8 V _ TA = 25_C 11.8 7.6 - 8.9 -5.7 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 9.5 6.1 -7.1 -4.6 Pulsed Drain Current IDM 20 A Continuous Source Current (Diode Conduction)a IS 2.9 1.1 -2.9 -1.1 TA = 25_C 3.5 1.4 3.5 1.4 Maximum Power Dissipationa TA = 70_C PD 2.2 0.9 2.2 0.9 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ Max Typ Max Unit t v 10 sec 26 35 26 35 Maximum Junction-to-Ambienta Steady State RthJA 60 85 60 85 _C/W Maximum Junction-to-Case (Drain) Steady State RthJC 3.9 5.5 3.9 5.5 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
同様の部品番号 - SI7540DP |
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同様の説明 - SI7540DP |
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