SI9942DY datasheet(4/6 Pages) VISHAY

部品番号	SI9942DY

部品情報	Complimentary 20-V (D-S) MOSFET

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Si9942DY

Vishay Siliconix

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4

Document Number: 70130

S-000652—Rev. L, 27-Mar-00

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

NCHANNEL

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

Single Pulse Power

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

VSD – Source-to-Drain Voltage (V)

VGS – Gate-to-Source Voltage (V)

TJ – Temperature (_C)

Time (sec)

–0.8

–0.6

–0.4

–0.2

–0.0

0.2

0.4

–50

0

50

100

150

0.00

0.10

0.20

0.30

0.40

0.50

02468

10

ID = 3 A

ID = 250 µA

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

TJ = 150_C

1

10

0

5

10

15

20

25

30

0.010

0.100

1

10

30

2

1

0.1

0.01

10–3

10–2

110

30

10–1

10–4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 62.5_C/W

3. TJM – TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

TJ = 25_C

同様の部品番号 - SI9942DY

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