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SN74CB3Q3125DGVR データシート(PDF) 1 Page - Texas Instruments |
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SN74CB3Q3125DGVR データシート(HTML) 1 Page - Texas Instruments |
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1 / 1 page www.ti.com FEATURES DGV OR PW PACKAGE (TOP VIEW) NC - No internal connection DBQ PACKAGE (TOP VIEW) 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 NC 1OE 1A 1B 2OE 2A 2B GND VCC 4OE 4A 4B 3OE 3A 3B NC 1 2 3 4 5 6 7 14 13 12 11 10 9 8 1OE 1A 1B 2OE 2A 2B GND VCC 4OE 4A 4B 3OE 3A 3B RGY PACKAGE (TOP VIEW) 1 14 7 8 2 3 4 5 6 13 12 11 10 9 4OE 4A 4B 3OE 3A 1A 1B 2OE 2A 2B DESCRIPTION/ORDERING INFORMATION SN74CB3Q3125 QUADRUPLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH SCDS143B – OCTOBER 2003 – REVISED MARCH 2005 • Data and Control Inputs Provide Undershoot Clamp Diodes • High-Bandwidth Data Path (up to 500 MHz (1)) • Low Power Consumption • 5-V Tolerant I/Os With Device Powered Up or (I CC = 0.3 mA Typ) Powered Down • V CC Operating Range From 2.3 V to 3.6 V • Low and Flat ON-State Resistance (r on) Characteristics Over Operating Range • Data I/Os Support 0- to 5-V Signaling Levels (r on = 3 Ω Typ) (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V) • Rail-to-Rail Switching on Data I/O Ports • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs – 0- to 5-V Switching With 3.3-V V CC • I off Supports Partial-Power-Down Mode – 0- to 3.3-V Switching With 2.5-V V CC Operation • Bidirectional Data Flow With Near-Zero • Latch-Up Performance Exceeds 100 mA Per Propagation Delay JESD 78, Class II • Low Input/Output Capacitance Minimizes • ESD Performance Tested Per JESD 22 Loading and Signal Distortion (C io(OFF) = 4 pF Typ) – 2000-V Human-Body Model (A114-B, Class II) • Fast Switching Frequency (f OE = 20 MHz Max) – 1000-V Charged-Device Model (C101) • Supports Both Digital and Analog (1) For additional information regarding the performance Applications: USB Interface, Differential characteristics of the CB3Q family, refer to the TI application Signal Interface, Bus Isolation, Low-Distortion report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008. Signal Gating The SN74CB3Q3125 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3125 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2003–2005, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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同様の説明 - SN74CB3Q3125DGVR |
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