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SI3850DV データシート(PDF) 2 Page - Vishay Siliconix |
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SI3850DV データシート(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si3850DV Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70778 S-55457—Rev. B, 09-Mar-98 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA N-Ch 0.6 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA P-Ch –0.6 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA ZG V l D i C I VDS = 20 V, VGS = 0 V N-Ch 1 A Zero Gate Voltage Drain Current IDSS VDS = –20 V, VGS = 0 V P-Ch –1 mA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 70_C N-Ch 10 mA VDS = –20 V, VGS = 0 V, TJ = 70_C P-Ch –10 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V N-Ch 3.0 A On-State Drain Currenta ID(on) VDS = –5 V, VGS = –4.5 V P-Ch –2.0 A DiS OS R i a VGS = 4.5 V, ID = 0.5 A N-Ch 0.38 0.500 W Drain-Source On-State Resistancea rDS(on) VGS = –4.5 V, ID = –0.5 A P-Ch 0.70 1.00 W Drain-Source On-State Resistancea rDS(on) VGS = 3.0 V, ID = 0.5 A N-Ch 0.55 0.750 W VGS = –3.0 V, ID = –0.5 A P-Ch 1.10 1.30 Forward Transconductancea gfs VDS = 10 V, ID = 1.2 A N-Ch 2.7 S Forward Transconductancea gfs VDS = –10 V, ID = –0.85 A P-Ch 1.2 S Diode Forward Voltagea VSD IS = 1 A, VGS = 0 V N-Ch 1.2 V Diode Forward Voltagea VSD IS = –1 A, VGS = 0 V P-Ch –1.2 V Dynamicb Total Gate Charge Qg NCh l N-Ch 0.8 2.0 C Total Gate Charge Qg N-Channel VDS =10 V VGS =4 5V ID =1 2 A P-Ch 1.10 2.5 C Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 1.2 A PCh l N-Ch 0.25 nC Gate-Source Charge Qgs P-Channel VDS = –10 V, VGS = –4.5 V P-Ch 0.50 nC Gate-Drain Charge Qgd VDS = –10 V, VGS = –4.5 V ID = –0.85 A N-Ch 0.2 Gate-Drain Charge Qgd P-Ch 0.2 Turn-On Delay Time td(on) NCh l N-Ch 10 20 Turn-On Delay Time td(on) N Channel P-Ch 8 15 Rise Time tr N-Channel VDD = 10 V, RL = 10 W N-Ch 20 40 Rise Time tr VDD 10 V, RL 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Ch 20 40 Turn-Off Delay Time td(off) P-Channel V10 V R 10 W N-Ch 20 40 ns Turn-Off Delay Time td(off) VDD = –10 V, RL = 10 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W P-Ch 10 20 ns Fall Time tf ID ^ –1 A, VGEN = –4.5 V, RG = 6 W N-Ch 16 30 Fall Time tf P-Ch 8 15 Source-Drain Reverse Recovery Time trr IF = 1 A, di/dt = 100 A/ms N-Ch 40 80 Source-Drain Reverse Recovery Time trr IF = –1 A, di/dt = 100 A/ms P-Ch 40 80 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. |
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