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ES1AF データシート(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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ES1AF データシート(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 4 page Super-Fast Rectifiers ES1AF--ES1DF SMF105AA www.gmesemi.com Rev.B Production specification Features Glass passivated junction For surface mounted applications Low profile package Low forward voltage drop High surge current capability RoHS Compliant Mechanical Data Case: SMAF molded plastic Molding compound, UL flammability classification rating 94V-0 Terminals: Solder plated, solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode end Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol ES1AF ES1BF ES1CF ES1DF Units Peak repetitive reverse voltage VRRM 50 100 150 200 V RMS reverse voltage VRMS 35 70 105 140 V DC blocking voltage VDC 50 100 150 200 V Maximum average forward output current IF(AV) 1.0 A Peak forward surge current, 8.3ms single half-sine-wave IFSM 30 A Thermal Characteristics Note: 1. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas Parameter Symbol ES1AF ES1BF ES1CF ES1DF Units Typical thermal resistance (Note 1) R ΘJA R ΘJC R ΘJL 78 °C/W 18 20 Operating junction temperature range TJ - 55 ---- + 150 °C Storage temperature range TSTG - 55 ---- + 150 °C |
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