VQ2004J datasheet(2/4 Pages) VISHAY

部品番号	VQ2004J

部品情報	Quad P-Channel 60-V (D-S) MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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2 / 4 page

VQ2004J

Vishay Siliconix

www.vishay.com

11-2

Document Number: 70220

S-04279—Rev. C, 16-Jul-01

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typa

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = –10 mA

–60

–110

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = –1 mA

–2

–3.4

–4.5

V

VDS = 0 V, VGS = "30 V

"100

Gate-Body Leakage

IGSS

TJ = 125_C

"500

nA

VDS = –60 V, VGS = 0 V

–10

m

Zero Gate Voltage Drain Current

IDSS

VDS = –48 V, VGS = 0 V, TJ = 125_C

–500

mA

On-State Drain Currentb

ID(on)

VDS = –10 V, VGS = –10 V

–1

–2

A

VGS = –10 V, ID = –1 A

2.5

5

W

Drain-Source On-Resistanceb

rDS(on)

TJ = 125_C

4.4

8

W

Forward Transconductanceb

gfs

VDS = –10 V, ID = –0.5 A

200

325

Common Source Output Conductanceb

gos

VDS = –7.5 V, ID = –0.1 A

0.45

mS

Dynamic

Input Capacitance

Ciss

75

150

Output Capacitance

Coss

VDS = –25 V, VGS = 0 V

f = 1 MHz

40

60

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

18

25

Switchingc

td(on)

11

15

Turn-On Time

tr

VDD = –25 V, RL = 47 W

^

30

40

td(off)

ID ^ –0.5 A, VGEN = –10 V

RG = 25 W

20

30

ns

Turn-Off Time

tf

G

20

30

Notes

a.

For DESIGN AID ONLY, not subject to production testing.

VPDV10

b.

Pulse test: PW

v300 ms duty cycle v2%.

c.

Switching time is essentially independent of operating temperature.

同様の部品番号 - VQ2004J

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	VQ2001J	250Kb / 4P	P-Channel Enhancement-Mode MOSFET Transistors Rev.C, 21-Jun-99
	VQ2001J	42Kb / 4P	P-Channel 30-V (D-S) MOSFETs Rev. E, 16-Jul-01
	VQ2001J	56Kb / 5P	P-Channel 30-V (D-S) MOSFETs 18-Jul-08
	VQ2001P	250Kb / 4P	P-Channel Enhancement-Mode MOSFET Transistors Rev.C, 21-Jun-99
	VQ2001P	42Kb / 4P	P-Channel 30-V (D-S) MOSFETs Rev. E, 16-Jul-01

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