VQ2004J datasheet(3/4 Pages) VISHAY

部品番号	VQ2004J

部品情報	Quad P-Channel 60-V (D-S) MOSFET

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VQ2004J

Vishay Siliconix

Document Number: 70220

S-04279—Rev. C, 16-Jul-01

www.vishay.com

11-3

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

–20

–16

–12

–8

–4

0

–3.8 V

0

–0.4

–0.8

–1.2

–1.6

–2.0

–3.6 V

–3.4 V

Ohmic Region Characteristics

Output Characteristics for Low Gate Drive

On-Resistance vs. Drain Current

Normalized On-Resistance

vs. Junction Temperature

Transfer Characteristics

On-Resistance vs. Gate-to-Source Voltage

VGS – Gate-Source Voltage (V)

VDS – Drain-to-Source Voltage (V)

ID – Drain Current (A)

VGS = –10 V

TJ – Junction Temperature (

_C)

VGS = –4.0 V

–2.0

0

–1

–2

–3

–4

–5

–1.6

–1.2

–0.8

–0.4

0

–9 V

–8 V

–7 V

–6 V

–5 V

–4 V

–0.5

–0.4

–0.3

0

–2

–10

–0.2

–0.1

–4

–6

–8

125

_C

TJ = –55

_C

10

8

6

0

–0.5

–3.0

4

2

–1.0

–1.5

–2.0

–2.5

7

0

–4

–8

–12

–16

–20

6

5

4

0

3

2

1

I D = 0.1 A

0.5 A

1.0 A

2.00

1.75

0.50

–50

–10

150

1.50

1.25

30

70

110

1.00

0.75

VGS = –10 V

ID = 0.5 A

VDS = –10 V

VGS = –10 V

–3.2 V

25

_C

同様の部品番号 - VQ2004J

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	VQ2001J	250Kb / 4P	P-Channel Enhancement-Mode MOSFET Transistors Rev.C, 21-Jun-99
	VQ2001J	42Kb / 4P	P-Channel 30-V (D-S) MOSFETs Rev. E, 16-Jul-01
	VQ2001J	56Kb / 5P	P-Channel 30-V (D-S) MOSFETs 18-Jul-08
	VQ2001P	250Kb / 4P	P-Channel Enhancement-Mode MOSFET Transistors Rev.C, 21-Jun-99
	VQ2001P	42Kb / 4P	P-Channel 30-V (D-S) MOSFETs Rev. E, 16-Jul-01

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