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YY9 データシート(PDF) 2 Page - Advanced Power Electronics Corp. |
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YY9 データシート(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 8 page N-CH Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 100 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=2A - - 325 mΩ VGS=4.5V, ID=2A - - 340 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.4 - 3 V gfs Forward Transconductance VDS=10V, ID=2A - 7.5 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA Qg Total Gate Charge ID=2A - 6.5 10.4 nC Qgs Gate-Source Charge VDS=50V - 1.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 1.3 - nC td(on) Turn-on Delay Time VDS=50V - 15 - ns tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω -63 - ns tf Fall Time VGS=10V - 27 - ns Ciss Input Capacitance VGS=0V - 310 496 pF Coss Output Capacitance VDS=50V - 21 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=1A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=2A, VGS=0V - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC 2 AP10C325Y . |
同様の説明 - YY9 |
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