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TLE5009-E2010 データシート(PDF) 8 Page - Infineon Technologies AG

部品番号 TLE5009-E2010
部品情報  3V to 5.5V operating supply voltage
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メーカー  INFINEON [Infineon Technologies AG]
ホームページ  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE5009-E2010 データシート(HTML) 8 Page - Infineon Technologies AG

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TLE5009
Functional Description
Data Sheet
8
Rev. 1.1, 2012-04
2
Functional Description
2.1
General
The GMR sensor is implemented using vertical integration. This means that the GMR sensitive areas are
integrated above the analog portion of the TLE5009 chip. These GMR elements change their resistance
depending on the direction of the magnetic field.
Four individual GMR elements are connected in a Wheatstone bridge arrangement. Each GMR element senses
one of two components of the applied magnetic field:
X component, Vx (cosine) or the
Y component, Vy (sine)
The advantage of a full-bridge structure is that the amplitude of the GMR signal is doubled and temperature effects
cancel out.
Figure 1
Sensitive bridges of the GMR sensor
Note: In Figure 1, the arrows in the resistors symbolize the direction of the reference layer. Size of the sensitive
areas is greatly exagerated for better visualisation.
The output signal of each bridge is unambiguous in a range of 180°. Therefore two bridges are oriented
orthogonally to each other to measure 360°.
With the trigonometric function ARCTAN, the true 360° angle value that is represented by the relation of X and Y
signals can be calculated according to Equation (1).
(1)
VDD
GND
ADCX+
GMR Resistors
ADCX-ADCY+ADCY-
VX
VY
N
S
90°


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