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FDD24AN06LA0 データシート(Datasheet) 2 Page - Fairchild Semiconductor

部品番号. FDD24AN06LA0
部品情報  N CHANNEL LOGIC LEVEL POWER TRENCH MOSFET
ダウンロード  11 Pages
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
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©2004 Fairchild Semiconductor Corporation
FDD24AN06LA0 Rev. A1
Package Marking and Ordering Information
Electrical Characteristics T
C = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics (V
GS = 5V)
Drain-Source Diode Characteristics
Notes:
1: Starting TJ = 25°C, L = 80µH, IAS = 28A.
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD24AN06LA0
FDD24AN06LA0
TO-252AA
330mm
16mm
2500 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
60
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS = 50V
-
-
1
µA
VGS = 0V
TC = 150
oC-
-
250
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
±100
nA
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA1
-
2
V
rDS(ON)
Drain to Source On Resistance
ID = 40A, VGS = 10V
-
0.016
0.019
ID = 36A, VGS = 5V
-
0.020
0.024
ID = 36A, VGS = 5V,
TJ = 175
oC
-
0.047
0.056
CISS
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
-
1850
-
pF
COSS
Output Capacitance
-
180
-
pF
CRSS
Reverse Transfer Capacitance
-
75
-
pF
Qg(TOT)
Total Gate Charge at 5V
VGS = 0V to 5V
VDD = 30V
ID = 36A
Ig = 1.0mA
16
21
nC
Qg(TH)
Threshold Gate Charge
VGS = 0V to 1V
-
1.8
2.4
nC
Qgs
Gate to Source Gate Charge
-
6.3
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
4.5
-
nC
Qgd
Gate to Drain “Miller” Charge
-
5.0
-
nC
tON
Turn-On Time
VDD = 30V, ID = 36A
VGS = 5V, RGS = 9.1Ω
--
195
ns
td(ON)
Turn-On Delay Time
-
12
-
ns
tr
Rise Time
-
118
-
ns
td(OFF)
Turn-Off Delay Time
-
26
-
ns
tf
Fall Time
-
41
-
ns
tOFF
Turn-Off Time
-
-
101
ns
VSD
Source to Drain Diode Voltage
ISD = 36A
-
-
1.25
V
ISD = 18A
-
-
1.0
V
trr
Reverse Recovery Time
ISD = 36A, dISD/dt = 100A/µs-
-
34
ns
QRR
Reverse Recovered Charge
ISD = 36A, dISD/dt = 100A/µs-
-
30
nC




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