SI7458DP datasheet(2/4 Pages) VISHAY

部品番号	SI7458DP

部品情報	N-Channel 20-V (D-S) Fast Switching MOSFET

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Si7458DP

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Document Number: 71821

S-20012—Rev. A, 04-Mar-02

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

1.4

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

VDS = 16 V, VGS = 0 V

1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 85_C

20

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 4.5 V

50

A

a

VGS = 4.5 V, ID = 22 A

0.0035

0.0045

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 19 A

0.006

0.0075

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 22 A

90

S

Diode Forward Voltagea

VSD

IS = 3 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

38

50

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 21 A

8

nC

Gate-Drain Charge

Qgd

8.5

Gate-Resistance

RG

0.9

W

Turn-On Delay Time

td(on)

22

35

Rise Time

tr

VDD = 10 V, RL = 10 W

22

35

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

125

190

ns

Fall Time

tf

60

90

Source-Drain Reverse Recovery Time

trr

IF = 3 A, di/dt = 100 A/ms

60

90

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

0

10

20

30

40

50

012345

VGS = 4.5 thru 2.5 V

25

_C

TC = 125_C

2 V

–55

_C

1.5 V

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

同様の部品番号 - SI7458DP

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI7450DP	198Kb / 4P	N-Channel 200-V (D-S) MOSFET Rev. B, 13-Feb-06
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