データシートサーチシステム |
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STF12PF06 データシート(PDF) 3 Page - STMicroelectronics |
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STF12PF06 データシート(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STP12PF06 STF12PF06 Table 8: SWITCHING ON Table 9: SWITCHING OFF Table 10: SOURCE DRAIN DIODE (1 )Pulse width limited by safe operating area. (2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 30 V ID = 6 A RG =4.7 Ω VGS = 10 V (Resistive Load, Figure 19) 20 40 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 48 V ID= 12 A VGS= 10 V 16 4 6 21 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 30 V ID = 6 A RG =4.7Ω, VGS = 10 V (Resistive Load, Figure 19) 40 10 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (1) Source-drain Current Source-drain Current (pulsed) 10 40 A A VSD (2) Forward On Voltage ISD = 12 A VGS = 0 2.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A di/dt = 100A/µs VDD = 30 V Tj = 150°C (see test circuit, Figure 21) 100 260 5.2 ns nC A ELECTRICAL CHARACTERISTICS (continued) Figure 3: Safe Operating Area for TO-220 Figure 4: Safe Operating Area for TO-220FP |
同様の部品番号 - STF12PF06 |
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同様の説明 - STF12PF06 |
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